NYU Creates New Technology For a More Efficient and Reliable Form of Computer Memory
By James Devitt
Technology that helps create a more efficient form of computer memory, which was developed at NYU, is being commercialized by a new start-up company formed by Allied Minds, a Boston-based seed investment corporation. The new company, Spin Transfer Technologies (STT), LLC, was announced in December. The technology relationship was initiated by Robert Fechter, associate director of NYU’s Office of Industrial Liaison.
Research on the project is to be conducted in the laboratory of NYU physics professor Andrew Kent. The initial funding for Spin Transfer Technologies is being provided by Allied Minds.
NYU researchers have developed a new form of non-volatile memory known as magnetoresistive random access memory, or MRAM, which will provide non-volatile storage of frequently updated critical data, and instant-on convenience—that is, enable computers and other electronic devices to turn on in the blink of an eye. NYU’s MRAM technology may provide a more efficient and reliable type of non-volatile storage, which is computer memory retained even when a device is turned off, such as in USB flash drives, magnetic computer storage devices, and smart cards.
The NYU researchers include Kent and Daniel Stein, NYU’s dean of science and a professor of physics, as well as post-doctoral and graduate students in NYU’s Department of Physics.
Most memory chips use electronic charge to store bits of information. The NYU devices employ the electron magnetic moment or spin to store data. The memory is also initialized using electron spins to rapidly change the magnetic orientation of nanometer scale magnets, in physics known as spin-transfer.
Electronic memory devices used in today’s computers are specialized to handle different computing and data storage tasks. But currently, a common problem encountered with non-volatile memory is slow write speed and the limited life of each memory cell, making it unsuitable for tasks requiring frequent read/write cycles.
“Our MRAM technology has the potential to provide significant advantages over competing approaches and may enable our devices to have higher write speeds, lower power consumption, and be scalable to next generation process technologies,” said Kent.
“MRAM is expected to be the dominant next-generation memory technology,” added Allied Minds COO Marc Eichenberger. “We’re very pleased to be working with STT and New York University.”
Kent has conducted ground-breaking studies of quantum effects in 3D arrays of nanometer scale magnets, including molecular nanomagnets. He has also studied the fundamental limits to the miniaturization of magnetic information storage and electron spin based devices. He is a fellow of the American Physical Society as well as a member of the American Physical Society’s Committee on International Freedom of Scientists.